DLA MIL-PRF-19500/241 N-2013
DISPOSITIVO SEMICONDUCTOR, DIODO, SILICIO, BAJA FUGA, TENSIÓN DIRECTA CONTROLADA, TIPOS 1N3595-1, 1N3595UB, 1N3595UBCA, 1N3595UBD, 1N3595UBCC, 1N3595UB2, 1N3595UB2R, 1N3595US, 1N3595 UR-1, 1N3595A-1, 1N3595AUS Y 1N3595AUR-1, ENERO, JANTX, JANTXV, JANS, JANH